FLASH->CR2|=(u8)0X40;//wpg set 1 FLASH->NCR2&=(u8)0XBF;//nwprg set 0,able word programing do { FLASH_DUKR=0XAE; FLASH_DUKR=0X56; }while((!(FLASH->IAPSR&((u8)0X08)))&&(ee_write_time<10));//erase write-protection ee_write_time=0; for(write_times=0;write_times<4;write_times++) { ((u8 )(0X4000+write_times))= ((u8 )(data+write_times)); } while((!(FLASH->IAPSR&((u8)0X04)))&&(ee_write_time<10));//write eeprom delay 100ms FLASH->IAPSR &=(u8)0XF7;//Clear DUL flag bit,enter data write protection FLASH->IAPSR &=(u8)0XFD;//Clear PUL flag bit,enter flash write protection (void)FLASH->IAPSR; 以上是EEPROM环节字写入，内存可以正确写入数据，但是调试时对应寄存器值异常如前文所述
