请教下，sdram 调试有数据错乱？？

hpdell 提问时间：2019-3-29 21:21 /

本帖最后由 hpdell 于 2019-3-29 21:27 编辑

请教下，sdram 调试有数据错乱？？

上图片中，2个框框里面的数据内容会同步发生变化，这个是怎么回事啊？

sdram 使用 MT48LC16M16

相关配置代码如下:

uint8_t BSP_SDRAM_Init(void)
{
  uint8_t sdramstatus = SDRAM_ERROR;
      FMC_SDRAM_TimingTypeDef SDRAM_Timing;
      SDRAM_HandleTypeDef    SDRAM_Handle;
      FMC_SDRAM_CommandTypeDef command = {0};

  /* SDRAM device configuration */
  SDRAM_Handle.Instance = FMC_SDRAM_DEVICE;

      SDRAM_Timing.LoadToActiveDelay = 2;
      SDRAM_Timing.ExitSelfRefreshDelay = 7;
      SDRAM_Timing.SelfRefreshTime    = 4;
      SDRAM_Timing.RowCycleDelay       = 7;
      SDRAM_Timing.WriteRecoveryTime = 2;
      SDRAM_Timing.RPDelay             = 2;
      SDRAM_Timing.RCDDelay          = 2;

      SDRAM_Handle.Init.SDBank          = FMC_SDRAM_BANK2;             /* 由硬件决定，使用 FMC_SDNE1, FMC_SDCKE1  */
      SDRAM_Handle.Init.ColumnBitsNumber = FMC_SDRAM_COLUMN_BITS_NUM_9;
      SDRAM_Handle.Init.RowBitsNumber    = FMC_SDRAM_ROW_BITS_NUM_13;
      SDRAM_Handle.Init.MemoryDataWidth = FMC_SDRAM_MEM_BUS_WIDTH_16;
      SDRAM_Handle.Init.InternalBankNumber = FMC_SDRAM_INTERN_BANKS_NUM_4;
      SDRAM_Handle.Init.CASLatency       = FMC_SDRAM_CAS_LATENCY_3;
      SDRAM_Handle.Init.WriteProtection = FMC_SDRAM_WRITE_PROTECTION_DISABLE;
      SDRAM_Handle.Init.SDClockPeriod    = SDCLOCK_PERIOD;             /* FMC时钟200MHz，2分频后给SDRAM，即100MHz */
      SDRAM_Handle.Init.ReadBurst       = FMC_SDRAM_RBURST_ENABLE;    /* 使能读突发 */
      SDRAM_Handle.Init.ReadPipeDelay    = FMC_SDRAM_RPIPE_DELAY_0;

  /* SDRAM controller initialization */

//  BSP_SDRAM_MspInit(&SDRAM_Handle, NULL); /* __weak function can be rewritten by the application */

  if(HAL_SDRAM_Init(&SDRAM_Handle, &SDRAM_Timing) != HAL_OK)
  {
sdramstatus = SDRAM_ERROR;
  }
  else
  {
  /* SDRAM initialization sequence */
BSP_SDRAM_Initialization_sequence(&SDRAM_Handle, &command);
sdramstatus = SDRAM_OK;
  }

  return sdramstatus;
}

MT48LC16M16 相关资料