这个就没什么好说的了，直接上代码了，主要封装了三个函数，擦除，写flash，读flash。
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1. // STM32F767IGT6: 1M flash
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2. // STM32F767ZIT6: 2M flash
   
3. #define ADDR_FLASH_SECTOR_0     ((uint32_t)0x08000000) /* Base @ of Sector 0, 32 Kbytes */
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4. #define ADDR_FLASH_SECTOR_1     ((uint32_t)0x08008000) /* Base @ of Sector 1, 32 Kbytes */
   
5. #define ADDR_FLASH_SECTOR_2     ((uint32_t)0x08010000) /* Base @ of Sector 2, 32 Kbytes */
   
6. #define ADDR_FLASH_SECTOR_3     ((uint32_t)0x08018000) /* Base @ of Sector 3, 32 Kbytes */
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7. #define ADDR_FLASH_SECTOR_4     ((uint32_t)0x08020000) /* Base @ of Sector 4, 128 Kbytes */
   
8. #define ADDR_FLASH_SECTOR_5     ((uint32_t)0x08040000) /* Base @ of Sector 5, 256 Kbytes */
   
9. #define ADDR_FLASH_SECTOR_6     ((uint32_t)0x08080000) /* Base @ of Sector 6, 256 Kbytes */
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10. #define ADDR_FLASH_SECTOR_7     ((uint32_t)0x080C0000) /* Base @ of Sector 7, 256 Kbytes */
    
11. #ifdef STM32F767ZIT6
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12. #define ADDR_FLASH_SECTOR_8     ((uint32_t)0x08100000) /* Base @ of Sector 8, 256 Kbytes */
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13. #define ADDR_FLASH_SECTOR_9     ((uint32_t)0x08140000) /* Base @ of Sector 9, 256 Kbytes */
    
14. #define ADDR_FLASH_SECTOR_10    ((uint32_t)0x08180000) /* Base @ of Sector 10, 256 Kbytes */
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15. #define ADDR_FLASH_SECTOR_11    ((uint32_t)0x081C0000) /* Base @ of Sector 11, 256 Kbytes */
    
16. #endif

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1. // 获取要擦除扇区编号
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2. static uint32_t flash_sector_number(uint32_t address)
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3. {
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4.   uint32_t sector = 0;
   
5. 
   
6.   if((address < ADDR_FLASH_SECTOR_1) && (address >= ADDR_FLASH_SECTOR_0))
   
7.   {
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8.     sector = FLASH_SECTOR_0;
   
9.   }
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10.   else if((address < ADDR_FLASH_SECTOR_2) && (address >= ADDR_FLASH_SECTOR_1))
    
11.   {
    
12.     sector = FLASH_SECTOR_1;
    
13.   }
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14.   else if((address < ADDR_FLASH_SECTOR_3) && (address >= ADDR_FLASH_SECTOR_2))
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15.   {
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16.     sector = FLASH_SECTOR_2;
    
17.   }
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18.   else if((address < ADDR_FLASH_SECTOR_4) && (address >= ADDR_FLASH_SECTOR_3))
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19.   {
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20.     sector = FLASH_SECTOR_3;
    
21.   }
    
22.   else if((address < ADDR_FLASH_SECTOR_5) && (address >= ADDR_FLASH_SECTOR_4))
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23.   {
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24.     sector = FLASH_SECTOR_4;
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25.   }
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26.   else if((address < ADDR_FLASH_SECTOR_6) && (address >= ADDR_FLASH_SECTOR_5))
    
27.   {
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28.     sector = FLASH_SECTOR_5;
    
29.   }
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30.   else if((address < ADDR_FLASH_SECTOR_7) && (address >= ADDR_FLASH_SECTOR_6))
    
31.   {
    
32.     sector = FLASH_SECTOR_6;
    
33.   }
    
34. #ifdef STM32F767ZIT6
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35.   else if((address < ADDR_FLASH_SECTOR_8) && (address >= ADDR_FLASH_SECTOR_7))
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36.   {
    
37.     sector = FLASH_SECTOR_7;
    
38.   }
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39.   else if((address < ADDR_FLASH_SECTOR_9) && (address >= ADDR_FLASH_SECTOR_8))
    
40.   {
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41.     sector = FLASH_SECTOR_8;
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42.   }
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43.   else if((address < ADDR_FLASH_SECTOR_10) && (address >= ADDR_FLASH_SECTOR_9))
    
44.   {
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45.     sector = FLASH_SECTOR_9;
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46.   }
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47.   else if((address < ADDR_FLASH_SECTOR_11) && (address >= ADDR_FLASH_SECTOR_10))
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48.   {
    
49.     sector = FLASH_SECTOR_10;
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50.   }
    
51.   else if((address < 0x081C0000) && (address >= ADDR_FLASH_SECTOR_11))
    
52.   {
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53.     sector = FLASH_SECTOR_11;
    
54.   }
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55. #else
    
56.   else if(address >= ADDR_FLASH_SECTOR_7)
    
57.   {
    
58.     sector = FLASH_SECTOR_6;
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59.   }
    
60. #endif
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61. 
    
62.   return sector;
    
63. }
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64. 
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65. // 擦除指定扇区数据 仔细的朋友会发现count没有用到，这里可以任意更改，我是为了兼容F1的命名。
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66. void SocFlashErase(uint32_t addr, uint8_t count)
    
67. {
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68.   FLASH_EraseInitTypeDef flash_erase;
    
69.   uint32_t flash_error;
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70. 
    
71.   HAL_FLASH_Unlock();
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72. 
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73.   flash_erase.TypeErase = FLASH_TYPEERASE_SECTORS;  // 擦除类型，扇区擦除
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74.   flash_erase.Sector = flash_sector_number(addr);   // 要擦除的扇区
    
75.   flash_erase.NbSectors = 1;                        // 一次只擦除一个扇区 这里可以使用参数的count 为了防止错误操作这里写成1
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76.   flash_erase.VoltageRange = FLASH_VOLTAGE_RANGE_3; // 电压范围，VCC=2.7~3.6V之间!!
    
77. 
    
78.   __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
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79.                          FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_ERSERR | FLASH_FLAG_BSY);
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80. 
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81.   HAL_FLASHEx_Erase(&flash_erase, &flash_error);
    
82. 
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83.   FLASH_WaitForLastOperation(50000);
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84. 
    
85.   HAL_FLASH_Lock();
    
86. }
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87. 
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88. uint8_t SocFlashWrite(uint32_t addr, uint8_t *buffer, uint32_t length)
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89. {
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90.   uint32_t i;
    
91.   uint16_t data = 0;
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92. 
    
93.   if (length == 0)
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94.   {
    
95.     return 0;
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96.   }
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97. 
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98.   HAL_FLASH_Unlock();
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99. 
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100.   __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
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101.                          FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_ERSERR | FLASH_FLAG_BSY);
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102. 
     
103.   // 按半字编程
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104.   for (i = 0; i < length; i += 2)
     
105.   {
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106.     data = (*(buffer + i + 1) << 8) + (*(buffer + i));
     
107.     HAL_FLASH_Program(FLASH_TYPEPROGRAM_HALFWORD, (uint32_t)(addr + i), data);
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108.   }
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109. 
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110.   HAL_FLASH_Lock();
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111. 
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112.   return 0;
     
113. }
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114. 
     
115. uint32_t SocFlashRead(uint32_t addr, uint8_t *buffer, uint32_t length)
     
116. {
     
117.   memcpy(buffer, (void *)addr, length);
     
118. 
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119.   return length;
     
120. }
     
121. 
     

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