编译器：IAR
芯片：stm8l151c8t6   64K的FLASH
目的：使用Block擦除和写入数据
严格按照以下步骤操作：

文件描述步骤

结果编译时出现错误：Error[Lc036]: no block or place matches the pattern "ro code section FLASH_CODE in stm8l15x_flash.o"


根据错误在place in NearData 中添加了  ro section FLASH_CODE，

编译时有警告：
Warning[Lp005]: placement includes a mix of sections with content (example "ro code section FLASH_CODE in stm8l15x_flash.o") and sections without content (example "rw data section .near.data in Flash.o")

Warning[Lp006]: placement includes a mix of writable sections (example "rw data section .near.data in Flash.o") and non-writable sections (example "ro code section FLASH_CODE in stm8l15x_flash.o")



测试程序时，程序卡死，RAM汇编指令：


怎么测试都通过不了Block擦除与读写。
请教各位大神，我是哪里操作不对吗？我哪里设置不对呢？
谢谢了，各位大神！！！